BSS123LT1 Datasheet (Motorola Inc)

BSS123LT1, TMOS FET Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 Motorola Preferred Device ® MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Symbol VDSS VGS VGSM ID IDM 3 1 2 Value 100 ± 20 ± 40 0.17 0.68 Unit Vdc Vdc Vpk Adc CASE 318 08, STYLE 21 SOT 23 (

BSS123LT1 Features

* 217. 303

* 675

* 2140 or 1

* 800

* 441

* 2447 JAPAN: Nippon Motorola Ltd.; Tatsumi

* SPD

* JLDC, 6F Seibu

* Butsuryu

* Center, 3

* 14

* 2 Tatsumi Koto

* Ku, Tokyo 135, Japan. 81

* 3

* 3521

* 8315 Mfax™: RMFAX0