MRF8P9040NR1 - RF Power Field Effect Transistors

Datasheet Details

Part number	MRF8P9040NR1
Manufacturer	NXP
File Size	897.73 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8P9040NR1-NXP.pdf

Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

📁 MRF8P9040NR1 Similar Datasheet

MRF8P9300HR6 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF8P9300HSR6 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF8P20160HR3 - RF Power Field Effect Transistors (Motorola Semiconductor Products)
MRF8P20160HSR3 - RF Power Field Effect Transistor (Freescale Semiconductor)
MRF8P23080HR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF8P23080HSR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF8P23160WHR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF8P23160WHSR3 - RF Power Field Effect Transistors (Freescale Semiconductor)

Other Datasheets by NXP

Published: Sep 15, 2024 |