MRF8S9200NR3 Datasheet (NXP) - RF Power Field Effect Transistor

MRF8S9200NR3, RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev.

1, 5/2010 RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Cha

MRF8S9200NR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative