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MRF8S9200NR3 - RF Power Field Effect Transistor

NXP

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Datasheet Details

Part number	MRF8S9200NR3
Manufacturer	NXP
File Size	533.12 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF8S9200NR3-NXP.pdf

MRF8S9200NR3 Product details

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
225°C Capable Plastic Package.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Mar 19, 2024 |