Datasheet4U Logo Datasheet4U.com

MRF8P20160HR3 - RF Power Field Effect Transistors

Description

10 pF Chip Capacitors 0.3 pF Chip Capacitor 1.1 pF Chip Capacitors 12 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 22 μF, 35 V Tantalum Capacitors 2.0 pF Chip Capacitors 2.2 pF Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 0.8 pF Chip Capacitor 50 Ω, 4 W Chip Resistor 8.25 Ω, 1/4 W Chip Res

Features

  • Production Tested in a Symmetrical Doherty Configuration.
  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number MRF8P20160HR3
Manufacturer Motorola Semiconductor Products
File Size 834.56 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF8P20160HR3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF8P20160HSR3 RF Power Field Effect Transistor Freescale Semiconductor
MRF8P23080HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF8P23080HSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF8P23160WHR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF8P23160WHSR3 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor Products

Part Number Description
MRF8P20160HSR3 RF Power Field Effect Transistors
MRFE6S9200HR3 RF Power FET
MRFE6S9200HSR3 RF Power FET
MRFE6S9201HR3 RF Power Field Effect Transistors
MRFE6S9201HSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DataSheet.in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 16.5 16.6 16.5 ηD (%) 44.8 45.3 45.8 Output PAR (dB) 7.0 6.9 6.9 ACPR (dBc) --29.8 --30.1 --30.6 MRF8P20160HR3 MRF8P20160HSR3 1880-2025 MHz, 37 W AVG.
Published: |