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MRF7S24250N Datasheet - NXP

MRF7S24250N RF Power LDMOS Transistor

NXP Semiconductors Technical Data RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET The 250 W CW RF power transistor is designed for industrial, scientific, medical (ISM) and industrial heating applications at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency rugged device is targeted to replace industrial magnetrons and will provide longer life and easier servicing. Typical Performance: In 2400

MRF7S24250N Features

* Characterized with series equivalent large

* signal impedance parameters

* Internally matched for ease of use

* Qualified up to a maximum of 32 VDD operation

* Integrated high performance ESD protection Typical Applications

* Industrial heating and drying

* Material w

MRF7S24250N Datasheet (642.63 KB)

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Datasheet Details

Part number:

MRF7S24250N

Manufacturer:

NXP ↗

File Size:

642.63 KB

Description:

Rf power ldmos transistor.

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MRF7S24250N Power LDMOS Transistor NXP

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