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MRF18060BLR3 - RF Power Field Effect Transistor

NXP

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Datasheet Details

Part number	MRF18060BLR3
Manufacturer	NXP
File Size	350.69 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF18060BLR3-NXP.pdf

MRF18060BLR3 Product details

Features

Internally Matched for Ease of Use.
High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch.

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Published: May 18, 2019 |