MRF18060BLR3 Datasheet (NXP) - RF Power Field Effect Transistor

MRF18060BLR3, RF Power Field Effect Transistor

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz.

Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

Specified for GSM 1930 - 1990 MHz.

GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain 13 dB (Typ) @ 60 Watts CW

MRF18060BLR3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Available with Low Gold Plating Thickness on Leads