MRF18060BR3 Datasheet (Motorola) - RF Power Field Effect Transistors

MRF18060BR3, RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz.

Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

Specified for GSM1930 - 1990 MHz.

GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Ga

MRF18060BR3 Features

* PER ANSI Y14.5M

* 1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION