MRF18060B Datasheet (Motorola) - RF Power Field Effect Transistors

MRF18060B, RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz.

Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

To be used in class AB for PCN PCS/cellular radio and WLL applications.

Specified for GSM1930 1990 MHz.

GSM Performance, Full

MRF18060B Features

* applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer sh