Datasheet Details
Part number:
MRF101BN, MRF101AN
Manufacturer:
File Size:
836.13 KB
Description:
Rf power ldmos transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF101BN, MRF101AN.
Please refer to the document for exact specifications by model.
MRF101BN, MRF101AN, RF Power LDMOS Transistors
NXP Semiconductors Technical Data Document Number: MRF101AN Rev.
1, 05/2019 RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs MRF101AN MRF101BN These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications.
The devices are extremely rugged and exhibit high performance up to 250 MHz.
Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps
MRF101BN Features
* Mirror pinout versions (A and B) to simplify use in a push
* pull, two
* up configuration
* Characterized from 30 to 50 V
* Suitable for linear application
* Integrated ESD protection with greater negative gate
* source voltage range for improved Class C operation
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