LTE42012R - NPN microwave power transistor

Datasheet Details

Part number	LTE42012R
Manufacturer	NXP
File Size	72.90 KB
Description	NPN microwave power transistor
Datasheet	LTE42012R_PhilipsSemiconductors.pdf

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Input matching cell improves input impedance and allows an easier design of wideband circuits.

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Published: Mar 27, 2005 |