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LTE21015R - NPN microwave power transistor

Description

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Fig.1 Simplified outline and symbol.

Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Input matching cell allows an easier design of circuits.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET LTE21015R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input matching cell allows an easier design of circuits. APPLICATIONS • Common emitter class-A linear power amplifiers up to 2 GHz.
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