LTE21015R - NPN microwave power transistor

NXP

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Datasheet Details

Part number	LTE21015R
Manufacturer	NXP
File Size	71.65 KB
Description	NPN microwave power transistor
Datasheet	LTE21015R_PhilipsSemiconductors.pdf

LTE21015R Product details

Description

1 c b e MAM131 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.Top view Marking code: 436 Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A ampliﬁer.MODE OF OPERATION Class-A f (GHz) 2 VCE (V) 16 IC (mA) 250 PL1 (W) ≥1.5 Gpo (dB) ≥8.5 Zi; ZL (Ω) see Figs 6 and 7 WARNING Product and environmental safety - toxi

Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Input matching cell allows an easier design of circuits.

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Published: Mar 27, 2005 |