LTE21025R - NPN microwave power transistor

Datasheet Details

Part number	LTE21025R
Manufacturer	NXP
File Size	51.80 KB
Description	NPN microwave power transistor
Datasheet	LTE21025R_PhilipsSemiconductors.pdf

1 c APPLICATIONS Common emitter class-A linear power amplifiers up to 4.2 GHz.

Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
Self-aligned process entirely ion implanted.
Gold metallization realizes very stable characteristics and excellent lifetime.
Input matching cell improves input impedance and allows an easier design of wideband circuits. olumns LTE21025R.

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Published: Mar 27, 2005 |