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A5G35S008N Airfast RF Power GaN Transistor

A5G35S008N Description

A5G35S008N Airfast RF Power GaN Transistor Rev.2 * November 2022 This 27 dBm RF power GaN transistor is designed for cellular base station a.

A5G35S008N Features

* High terminal impedances for optimal broadband performance
* Designed for low complexity linearization systems
* Universal broadband driver
* Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S008N 3300
* 3

A5G35S008N Applications

* covering the frequency range of 3300 to 3800 MHz. 3500 MHz
* Typical Single
* Carrier W
* CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 24 mA, Pout = 27 dBm Avg. , Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1) Frequency Gps (dB) hD Output PAR ACPR (%)

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Datasheet Details

Part number
A5G35S008N
Manufacturer
NXP ↗
File Size
201.98 KB
Datasheet
A5G35S008N-NXP.pdf
Description
Airfast RF Power GaN Transistor

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