A5G35S008N Airfast RF Power GaN Transistor

NXP

Description

A5G35S008N Airfast RF Power GaN Transistor Rev.2 * November 2022 This 27 dBm RF power GaN transistor is designed for cellular base station a.

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Datasheet Specifications

Part number: A5G35S008N
Manufacturer: NXP ↗
File Size: 201.98 KB
Datasheet: A5G35S008N-NXP.pdf
Description: Airfast RF Power GaN Transistor

Features

* High terminal impedances for optimal broadband performance
* Designed for low complexity linearization systems
* Universal broadband driver
* Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S008N 3300
* 3

Applications

* covering the frequency range of 3300 to 3800 MHz. 3500 MHz
* Typical Single
* Carrier W
* CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 24 mA, Pout = 27 dBm Avg. , Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1) Frequency Gps (dB) hD Output PAR ACPR (%)

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A5G35S008N Airfast Power GaN Transistor NXP

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