A5G23H065N Airfast RF Power GaN Transistor

NXP

Description

A5G23H065N Airfast RF Power GaN Transistor Rev.1 * November 2022 This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cel.

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Datasheet Specifications

Part number: A5G23H065N
Manufacturer: NXP ↗
File Size: 187.01 KB
Datasheet: A5G23H065N-NXP.pdf
Description: Airfast RF Power GaN Transistor

Features

* High terminal impedances for optimal broadband performance
* Improved linearized error vector magnitude with next generation signal
* Able to withstand extremely high output VSWR and broadband operating conditions
* Designed for low complexity linearization systems

Applications

* requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band. There is no guarantee of performance when this part is used in applications desig

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A5G23H065N Airfast Power GaN Transistor NXP

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