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A5G35S004N Airfast RF Power GaN Transistor

A5G35S004N Description

A5G35S004N Airfast RF Power GaN Transistor Rev.4 * November 2022 This RF power GaN transistor is designed for cellular base station applicat.

A5G35S004N Features

* High terminal impedances for optimal broadband performance
* Designed for low complexity linearization systems
* Universal broadband driver
* Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S004N 3300
* 4

A5G35S004N Applications

* covering the frequency range of 3300 to 4300 MHz. 3500 MHz
* Typical Single
* Carrier W
* CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 12 mA, Pout = 24.5 dBm Avg. , Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1) Frequency Gps (dB) hD Output PAR ACPR (

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Datasheet Details

Part number
A5G35S004N
Manufacturer
NXP ↗
File Size
203.96 KB
Datasheet
A5G35S004N-NXP.pdf
Description
Airfast RF Power GaN Transistor

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