A5G35H120N Airfast RF Power GaN Transistor

NXP

Description

A5G35H120N Airfast RF Power GaN Amplifier Rev.3 * 18 October 2023 Product data sheet 1 General .
This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth.

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Datasheet Specifications

Part number: A5G35H120N
Manufacturer: NXP ↗
File Size: 402.47 KB
Datasheet: A5G35H120N-NXP.pdf
Description: Airfast RF Power GaN Transistor

Features

* High terminal impedances for optimal broadband performance
* Improved linearized error vector magnitude with next generation signal
* Able to withstand extremely high output VSWR and broadband operating conditions
* Designed for low complexity linearization systems

Applications

* requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz. This part is characterized and performance is guaranteed for applications operating in the 3300 to 3800 MHz band. There is no guarantee of performance when this part is used in applications desig

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A5G35H120N Airfast Power GaN Transistor NXP

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