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PMZB420UN - MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Fast switching.
  • Trench MOSFET technology.
  • Low threshold voltage.
  • Ultra thin package profile with 0.37 mm height 1.3.

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Datasheet Details

Part number PMZB420UN
Manufacturer NXP Semiconductors
File Size 313.00 KB
Description MOSFET
Datasheet download datasheet PMZB420UN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMZB420UN 83B 30 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. SO T8 1.2 Features and benefits  Fast switching  Trench MOSFET technology  Low threshold voltage  Ultra thin package profile with 0.37 mm height 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.