PMZB300XN
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Fast switching
- Trench MOSFET technology
- Low threshold voltage
- Ultra thin package profile of 0.37mm height 1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits 1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 200 m A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -12
- Typ
- Max 20 12 1
Unit V V A
Static characteristics drain-source on-state resistance
[1]
- 0.3
Ω
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
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NXP Semiconductors
20 V,...
