PMZB170VNE
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Very low threshold voltage
- Very fast switching
- Trench MOSFET technology
- Electro Static Discharge (ESD) protection typically > 2 k V
- Ultra thin package profile of 0.37 mm
3. Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C VGS = 1.8 V; ID = 0.1 A; Tj = 25 °C
Min Typ Max
- -
-6
- 6
[1]
- -
- 170 200
- 250 400
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated,...
