PMZB150UNE
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- Electro Static Discharge (ESD) protection: 2 k V HBM
- Ultra thin package profile of 0.37 mm
3. Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8
- 8V
[1]
- - 1.5 A
- 170 200 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Nexperia
20 V, N-channel Trench...
