Datasheet4U Logo Datasheet4U.com

NTE2911 - N-Channel MOSFET

Features

  • D Low Drain.
  • Source ON.
  • Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhancement Mode G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain.
  • Source Voltage, VDSS.
  • . 500V Drain.
  • Gate Voltage (RGS = 20k), VDGR.
  • 500V Gate.
  • Sourc.

📥 Download Datasheet

Datasheet Details

Part number NTE2911
Manufacturer NTE Electronics (defunct)
File Size 67.99 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2911 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE2911 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON−Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhancement Mode G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current (Note Continuous . 2), ... I.D. . . . . . . . . . . .
Published: |