GT10PI120B3H Datasheet (NJSME)

GT10PI120B3H, IGBT

VGE(th) Gate-Emitter Threshold Voltage Conditions IC = 1 mA, VCE = VGE Min Typ Max Unit 4.5 5.5 6.0 V VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance IC = 10 A, VGE

GT10PI120B3H Features

* z Short Circuit Rated>10μs z Field Stop Trench Gate IGBT z Low Saturation Voltage z Low Switching Loss z 100% RBSOA Tested（2×Ic） z Low Stray Inductance z Lead Free, Compliant with RoHS Requirement Applications： z Industrial Inverters z Servo Applications IGBT, Inverter Maximum Rated Values (TC=25℃