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NE5520279A - NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET

Download the NE5520279A datasheet PDF. This datasheet also covers the NE5-5202 variant, as both devices belong to the same necs 3.2 v / 2 w / l&s band medium power silicon ld-mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications.

Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package.

Features

  • LOW COST.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NE5-5202-79A.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NE5520279A
Manufacturer NEC
File Size 166.32 KB
Description NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
Datasheet download datasheet NE5520279A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTPUT POWER: +32 dBm TYP 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.5±0.2 Source 0X001 4.4 MAX. • HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz • SINGLE SUPPLY: 2.8 to 6.0 V A 0.4±0.15 5.7 MAX. 0.2±0.1 0.8±0.15 1.0 MAX. • HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz 2 Gate Drain Gate Drain 0.8 MAX. 3.6±0.2 DESCRIPTION NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.
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