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NE5520279A, NE5-5202 NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET

NE5520279A Description

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET .
NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applica.

NE5520279A Features

* LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
* HIGH OUTPUT POWER: +32 dBm TYP 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.5±0.2 Source 0X001 4.4 MAX.
* HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 G

NE5520279A Applications

* Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. APPLICATIONS
* DIGITAL CELLULAR PHONES: 3.2 V DCS1800 Handsets
* 0.7-2.5 GHz FIXED WIRELESS ACCESS
* W-LAN
* SHORT RANGE WIRELESS

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: NE5520279A, NE5-5202. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
NE5520279A, NE5-5202
Manufacturer
NEC
File Size
166.32 KB
Datasheet
NE5-5202-79A.pdf
Description
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
Note
This datasheet PDF includes multiple part numbers: NE5520279A, NE5-5202.
Please refer to the document for exact specifications by model.

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NECS 3.2 L &S BAND MEDIUM POWER SILICON LD-MOSFET NEC
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