Datasheet Summary
NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET
Features
- LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
- HIGH OUTPUT POWER: +32 dBm TYP
5.7 MAX. 0.6±0.15
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
(Bottom View)
4.2 MAX. Source 1.5±0.2 Source
0X001
4.4 MAX.
- HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz
- SINGLE SUPPLY: 2.8 to 6.0 V
A
0.4±0.15 5.7 MAX. 0.2±0.1
0.8±0.15
1.0 MAX.
- HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz
2
Gate
Drain
Gate
Drain
0.8 MAX. 3.6±0.2
DESCRIPTION
NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications. Die...