NE5510179A
DESCRIPTION
The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 3.6 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0 d Bm output power with 50% power added efficiency at 1.9 GHz under the 3.6 V supply voltage, or can deliver 29 d Bm output power at 2.8 V by varying the gate voltage as a power control function.
FEATURES
- High output power
: Pout = 30.0 d Bm TYP. (VDS = 3.6 V, IDset = 300 m A, f = 1.9 GHz, Pin = 22 d Bm)
- High power added efficiency : ηadd = 50% TYP. (VDS = 3.6 V, IDset = 300 m A, f = 1.9 GHz, Pin = 22 d Bm)
- High linear gain
: GL = 11.0 d B TYP. (VDS = 3.6 V, IDset = 300 m A, f = 1.9 GHz, Pin = 10 d Bm)
- Surface mount package
: 5.7 × 5.7 × 1.1 mm MAX.
- Single supply
: VDS = 3.0 to 6.0 V
APPLICATIONS
- Digital cellular phones
- Others
: 3.6 V driver...
