NE5511279A Datasheet | CEL

DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 d Bm output power with 48% power added efficiency at 900 MHz under the 7.5 V supply voltage. FEATURES - High output power - High power added efficiency - High linear gain - Surface mount package - Single supply : Pout = 40.0 d Bm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 d Bm, IDset = 400 m A) : Pout = 40.5 d Bm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 d Bm, IDset = 400 m A) : add = 48% TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 d Bm, IDset = 400 m A) : add = 50% TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 d Bm, IDset = 400 m A) : GL = 15.0 d B TYP. (f = 900 MHz, VDS = 7.5 , Pin = 5 d Bm V, IDset = 400 m A) : GL = 18.5 d B TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 5 d Bm, IDset = 400 m A) : 5.7  5.7  1.1 mm MAX. : VDS = 2.8 to...