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NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

NE52118 Description

PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT .

NE52118 Features

* For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω)
* 4-pin super minimold package
* Grounded Emitter Transistor

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Datasheet Details

Part number
NE52118
Manufacturer
NEC
File Size
63.90 KB
Datasheet
NE52118_NEC.pdf
Description
L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

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