NE5511279A 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

NEC

Description

NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET .
NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power ampliﬁer for 7.

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Datasheet Specifications

Part number: NE5511279A
Manufacturer: NEC
File Size: 103.99 KB
Datasheet: NE5511279A_NEC.pdf
Description: 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

Features

* HIGH OUTPUT POWER: Pout = 40.0 dBm TYP. , f = 900 MHz, VDS = 7.5 V, Pout = 40.5 dBm TYP. , f = 460 MHz, VDS = 7.5 V,
* HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP. , f = 900 MHz, VDS = 7.5 V, 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX

Applications

* UHF RADIO SYSTEMS
* CELLULAR REPEATERS
* TWO-WAY RADIOS
* FRS/GMRS

NE5511279A Distributors

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NE5511279A 7.5 UHF BAND POWER SILICON LD-MOS FET NEC

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