NE5510279A 3.5V OPERATION SILICON RF POWER MOSFET

NEC

Description

3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS .
The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.

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Datasheet Specifications

Part number: NE5510279A
Manufacturer: NEC
File Size: 45.29 KB
Datasheet: NE5510279A_NEC.pdf
Description: 3.5V OPERATION SILICON RF POWER MOSFET

Features

* HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm
* HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm
* HIGH LINEAR GAIN: 10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm

Applications

* DIGITAL CELLULAR PHONES
* OTHERS ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS VTH gm RDS(ON) BVDSS CHARACTERISTICS Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Transconductance Drain to Source On Resistance D

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NE5510279A 3.5V OPERATION SILICON POWER MOSFET NEC

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