2SK2597 N-Channel MOSFET

NEC

Description

PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PH.

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Datasheet Specifications

Part number: 2SK2597
Manufacturer: NEC
File Size: 101.63 KB
Datasheet: 2SK2597_NEC.pdf
Description: N-Channel MOSFET

Features

* High output, high gain PO = 100 W, GL = 13 dB (TYP. ) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP. ) (f = 960 MHz)
* Low intermodulation distortion
* Covers all base station frequencies such as 800-MHz PDC and GSM
* High-reliability gold electrodes
* Hermetic sea

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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2SK2597 N-Channel MOSFET NEC

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