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2SK2512 - SWITCHING N-CHANNEL POWER MOS FET

Description

The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A) 15.0±0.3 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2.
  • Low Ciss Ciss = 2 100 pF TYP.
  • Built-in G-S Protection Diode.

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Datasheet Details

Part number 2SK2512
Manufacturer NEC
File Size 82.27 KB
Description SWITCHING N-CHANNEL POWER MOS FET
Datasheet download datasheet 2SK2512 Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES • Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A) 15.0±0.3 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 • Low Ciss Ciss = 2 100 pF TYP.
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