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NCEP40T11K - N-Channel Power MOSFET

Description

The NCEP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =40V,ID =110A RDS(ON)=2.4mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V Schematic Diagram.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet Details

Part number NCEP40T11K
Manufacturer NCE Power Semiconductor
File Size 404.94 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NCEP40T11K Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCEP40T11K NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =40V,ID =110A RDS(ON)=2.4mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.
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