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NCEP020N30QU - N-Channel Super Trench II Power MOSFET

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Features

  • VDS =30V,ID =70A RDS(ON)=1.75mΩ (typical) @ VGS=10V RDS(ON)=3.0mΩ (typical) @ VGS=4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

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Datasheet Details

Part number NCEP020N30QU
Manufacturer NCE Power Semiconductor
File Size 879.43 KB
Description N-Channel Super Trench II Power MOSFET
Datasheet download datasheet NCEP020N30QU Datasheet

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http://www.ncepower.com NCEP020N30QU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of General Features ● VDS =30V,ID =70A RDS(ON)=1.75mΩ (typical) @ VGS=10V RDS(ON)=3.0mΩ (typical) @ VGS=4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
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