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NCE75H35TC - N-Channel Enhancement Mode Power MOSFET

Description

The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in automotive applications and a wide variety of other applications.

Features

  • VDSS =75V,ID =350A RDS(ON) < 2.2mΩ @ VGS=10V （Typ：1.7 mΩ）.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number NCE75H35TC
Manufacturer NCE Power Semiconductor
File Size 334.26 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE75H35TC Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE75H35TC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features ● VDSS =75V,ID =350A RDS(ON) < 2.2mΩ @ VGS=10V （Typ：1.
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