NCE4688 Datasheet PDF - NCE Power Semiconductor N & P-Channel Enhancement Mode Power MOSFET Specs

NCE4688 - N & P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE4688 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V N-channel P-channel Schematic diagram.
P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width 4688 NCE4688 SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless o.

Datasheet Details

Part number	NCE4688
Manufacturer	NCE Power Semiconductor
File Size	436.96 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE4688 Datasheet
Additional preview pages of the NCE4688 datasheet.

📁 Similar Datasheet

NCE4614 - Dual-Channel MOSFET (VBsemi)

NCE4060K - N-Channel 40V MOSFET (VBsemi)

NCE40H12K - N-Channel MOSFET (VBsemi)

NCE4503 - SOP8 Plastic-Encapsulate MOSFETS (TY Semiconductor)

NCE0103 - N-Channel 100V MOSFET (VBsemi)

NCE0157A2 - N-Channel Power MOSFET (VBsemi)

NCE01H16 - N-Channel MOSFET (VBsemi)

NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

NCE1520 - N-Channel 150-V MOSFET (VBsemi)

NCE1540KA - N-Channel 150V MOSFET (VBsemi)

Full PDF Text Transcription

Click to expand full text

http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =6.

Published: Jun 2, 2018 |