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NCE40H12K - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.

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Datasheet Details

Part number NCE40H12K
Manufacturer VBsemi
File Size 246.04 KB
Description N-Channel MOSFET
Datasheet download datasheet NCE40H12K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NCE40H12K-VB NCE40H12K-VB Datasheet N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.0016 at VGS = 10 V 0.0020 at VGS = 4.5 V ID (A)a, c 120 100 Qg (Typ.) 120 nC D TO-252 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies www.VBsemi.com RoHS COMPLIANT G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.
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