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NCE0160AG - N-Channel Enhancement Mode Power MOSFET

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NCE Power Semiconductor

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NCE0160AG N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE0160AG

Datasheet Details

Part number	NCE0160AG
Manufacturer	NCE Power Semiconductor
File Size	349.01 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0160AG Datasheet
Additional preview pages of the NCE0160AG datasheet.

Product details

Description

The NCE0160AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =60A RDS(ON) < 17mΩ @ VGS=10V (Typ:13.5mΩ) Schematic diagram.
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Marking and pin assignment.

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Published: Jun 2, 2018 |