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NCE0117 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet Details

Part number NCE0117
Manufacturer NCE Power Semiconductor
File Size 381.20 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0117 Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0117 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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