Description
This is a silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications.
Features
- high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings:
Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation (TA = +25°C), Derate above 25°C Total Device Dissipation(TC = +25°C), Derate above 25°C Operating Junction Temperature, Storage Temperature Range, Thermal Resistance, Junction-to-Case, Lead Temperature (During Soldering,1/16.
2N4234-Multicomp.pdf
