Description
A Silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications.
Features
- high breakdown voltage, low leakage current. Low capacity, and beta useful over an extremely wide current range. Pin Configurations: 1. Emitter 2. Base 3. Collector
Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TC = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range, Thermal Resistance, Ju.
2N4032-Multicomp.pdf
