Datasheet4U Logo Datasheet4U.com

2N4233A - NPN Transistor

Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested

and reliable operation.

Designed for general-purpose power amplifier and switching applications ABSOLUTE MA

📥 Download Datasheet

📁 Similar Datasheet

  • 2N4233A - POWER TRANSISTORS (Mospec Semiconductor)
  • 2N4233A - Bipolar NPN Device (Seme LAB)
  • 2N4233 - Bipolar NPN Device (Seme LAB)
  • 2N4233 - Medium-power NPN silicon transistors (Motorola)
  • 2N4231 - Bipolar NPN Device (Seme LAB)
  • 2N4231 - Medium-power NPN silicon transistors (Motorola)
  • 2N4231A - SILICON TRANSISTORS (Central Semiconductor)
  • 2N4232 - Bipolar NPN Device (Seme LAB)
  • 2N4232 - Medium-power NPN silicon transistors (Motorola)
  • 2N4232A - SILICON TRANSISTORS (Central Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 75 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.32 ℃/W 2N4233A isc website：www.iscsemi.
Published: |