Description
A silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications.
Features
- high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TC = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction-to-Case Lead temperature (During Soldering, 1/1.
2N4037-Multicomp.pdf
