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SLN30D03T - 30V N-Channel MOSFET

Description

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - N-Channel: 30V 30A RDS(on)Typ= 8mΩ@VGS = 10 V RDS(on))Typ=13mΩ@VGS =4..5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested D1 D1 D2 D2 D2 D2 D1 D1 D1 D2 DFN3.
  • 3-D G1 S1 G1 S2 G2 G2 S2 G1 S1 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage.

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Datasheet Details

Part number SLN30D03T
Manufacturer Msemitek
File Size 593.80 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet SLN30D03T Datasheet

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Full PDF Text Transcription

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SLN30D03T SLN30D03T 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application  PWM Application  Load Switch  Power Management Features - N-Channel: 30V 30A RDS(on)Typ= 8mΩ@VGS = 10 V RDS(on))Typ=13mΩ@VGS =4..
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