Description
Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package.
A Darlington configuration is used for broadband performance from DC-4.0 GHz.
Features
- Patented, Reliable GaAs HBT Technology.
- Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz.
- High Associated Gain: 22dB Typ. at 2.0 GHz.
- True 50 Ohm MMIC : No External Matching
Required
Noise Figure vs. Frequency
3.
- Low Current Draw : Only 8mA.
- Low Cost Surface Mount Plastic Package.