Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.
This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- - N-Channel:30V 90A
RDS(on)Typ= 3.3mΩ@VGS = 10 V RDS(on))Typ= 5.5mΩ@VGS = 4..5V - Very Low On-resistance RDS(ON) - Low Crss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
DD DD
D DD D
D
DFN3.
- 3
S S SG
GSSS
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS PD R θJC TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage.