Description
Stanford Microdevices’ SLN-286 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package.
A Darlington configuration is used for broadband performance from DC-3.5 GHz.
Features
- Patented, Reliable GaAs HBT Technology.
- Low Noise Figure: 1.7 dB from 0.1 to 1.5 GHz.
- High Associated Gain: 27 dB Typ. at 2.0 GHz.
- True 50 Ohm MMIC : No External Matching
Required.
- Low Current Draw : Only 5 mA at 3V
Low Noise MMICs
dB
1.5 5 mA.
- Low Cost Surface Mount Plastic Package
1 0.1 0.5 1 1.5 2 2.5 3 3.5
GHz.