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MTD1N80E - TMOS POWER FET

Motorola

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Datasheet Details

Part number	MTD1N80E
Manufacturer	Motorola
File Size	216.70 KB
Description	TMOS POWER FET
Datasheet	MTD1N80E_Motorola.pdf

MTD1N80E Product details

Features

nts. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely ope.

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Published: Jan 28, 2010 |