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MTD1N50E - TMOS POWER FET

Motorola

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Datasheet Details

Part number	MTD1N50E
Manufacturer	Motorola
File Size	215.60 KB
Description	TMOS POWER FET
Datasheet	MTD1N50E_Motorola.pdf

MTD1N50E Product details

Features

ance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain an.

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Published: Jan 28, 2010 |