MTD10N10EL - Power Field Effect Transistor DPAK

ON Semiconductor

Datasheet Details

Part number	MTD10N10EL
Manufacturer	ON Semiconductor
File Size	104.99 KB
Description	Power Field Effect Transistor DPAK
Datasheet	MTD10N10EL_ONSemiconductor.pdf

VDSS 100 V http://onsemi. com RDS(ON) TYP 0.22 W ID MAX 10 A N.
Channel D.
Avalanche Energy Specified.
Source.
to.
Drain Diode Recovery Time Comparable to a Discrete.
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Pb.
Free Package is Available G S.

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Published: Apr 21, 2007 |