MRF19060 Datasheet (Motorola) - RF POWER FIELD EFFECT TRANSISTORS

MRF19060, RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19060/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz.

Suitable for CDMA, TDMA, GSM and multicarrier amplifier www.datasheet4u.com applications.

Typical CDMA Performance: 1960 MHz, 26 Volts IS 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Powe

MRF19060 Features

* (INSULATOR) M ccc F E A A (FLANGE) T SEATING PLANE CASE 465

* 06 ISSUE F NI

* 780 MRF19060 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION